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MITSUBISHI TRANSISTOR MODULES
QM20KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM20KD-HB
* * * * *
IC Collector current .......................... 20A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
R6
11 11 11 12.5 10.5 10.5 18.5 KP BuP BvP BwP U AT S R 18 93 110 V W
2-5.5 Tab#250, t=0.8
18
N BuN BvN BwN 18 15 8
9
30
42
Tab#110, t=0.5
KP BuP R S T A U BuN BvP V BvN BwP W BwN N
(24.45)
6.5
15
LABEL
(23.6)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM20KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current)
(Inverter part, Tj=25C)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 20 20 83 1 200 Unit V V V V A A W A A
ABSOLUTE MAXIMUM RATINGS
Symbol VRRM VRSM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing
(Converter part, Tj=25C)
Conditions Ratings 800 900 220 Three phase full wave rectifying circuit, Tc=79C One half cycle at 60 Hz, peak value Value for one cycle of surge current 30 300 375 Unit V V V A A A2s
ABSOLUTE MAXIMUM RATINGS
Symbol Tj Tstg Viso -- -- Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Common)
Conditions Ratings -40~150 -40~125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 125 Unit C C V N*m kg*cm g
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Inverter part, Tj=25C)
Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=20A, IB=80mA -IC=20A (diode forward voltage) IC=20A, VCE=2V Limits Min. -- -- -- -- -- -- 250 -- VCC=300V, IC=20A, IB1=120mA,-IB2=0.4A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 40 2.0 2.5 1.5 -- 1.5 12 2.0 1.5 2.5 0.35 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
ELECTRICAL CHARACTERISTICS
Symbol IRRM VFM Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Forward voltage Thermal resistance Contact thermal resistance
(Converter part, Tj=25C)
Test conditions VR=VRRM, Tj=150C IF=30A Junction to case Case to fin, conductive grease applied Limits Min. -- -- -- -- Typ. -- -- -- -- Max. 5.0 1.3 0.9 0.35 Unit mA V C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM20KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 50 COLLECTOR CURRENT IC (A) Tj=25C 40 IB=400mA IB=200mA IB=80mA IB=40mA 20 IB=20mA DC CURRENT GAIN hFE 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0 2 VCE=5.0V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
30
VCE=2.0V
10
Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
0
0
1
2
3
4
5 VCE (V)
COLLECTOR-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 1.0 1.4 1.8 2.2 2.6 VBE (V) 3.0 VCE=2.0V Tj=25C
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 IB=80mA 7 Tj=25C 5 Tj=125C 4 3 2 VBE(sat) 10 0 7 5 4 3 2 10 -1 10 0
BASE CURRENT IB (A)
SATURATION VOLTAGE
VCE(sat)
2 3 4 5 7 10 1
2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 ton, ts, tf (s) Tj=25C Tj=125C 4 IC=25A 3 2 10 1 7 5 4 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C VCC=300V IB1=120mA IB2=-400mA
3
ts
2
SWITCHING TIME
1
IC=15A
IC=20A
0 10 -2
2 3 4 5 7 10 -1
2 3 4 5 7 10 0
tf 10 0 7 5 ton 4 3 10 0 2 3 4 5 7 10 1
2 3 4 5 7 10 2 IC (A)
BASE CURRENT IB (A)
COLLECTOR CURRENT
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM20KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 ts, tf (s) 10 1 7 5 4 3 2 10 0 7 5 4 3 10 -1 Tj=25C Tj=125C VCC=300V IB1=120mA IC=20A
REVERSE BIAS SAFE OPERATING AREA 50 Tj=125C COLLECTOR CURRENT IC (A) 40 IB2=-3A IB2=-0.5A
SWITCHING TIME
ts
30
20
tf
10
2 3 4 5 7 10 0
2 3 4 5 7 10 1
0
0
100 200 300 400 500 600 700 800 VCE (V)
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA 10 2 7 TC=25C 5 NON-PEPETITIVE 3 2 10 1 7 5 3 2 100 100s
1m
20 0 s
DERATING FACTOR OF F. B. S. O. A. SECOND BREAKDOWN AREA
COLLECTOR CURRENT IC (A)
90 DERATING FACTOR (%) 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 20 40 60
50 s
10 0 7 5 3 2 TC=25C 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V)
1.8 1.6 1.4 Zth (j-c) (C/ W) 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s)
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 710 1 2.0
s 5m s m 10 DC
s
80 100 120 140 160 TC (C)
CASE TEMPERATURE
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 2 Tj=25C 7 Tj=125C 5 4 3 2 10 1 7 5 4 3 2 10 0 0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM20KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 200 180 160 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 2 3 4 5 7 10 1 10 2 VCC=300V IB1=120mA IB2=-400mA Tj=25C Tj=125C
Qrr trr (s)
Irr trr
10 1
10 0 2 3 4 5 7 10 2 IF (A)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 3.2 2.8 2.4 Zth (j-c) (C/ W) 2.0 1.6 1.2 0.8 0.4 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -12 3 5 7 10 0 TIME (s)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM20KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES (Converter parts)
MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.8 1.2 1.6 2.0 2.4 FORWARD VOLTAGE VF (V) ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 500 SURGE (NON-REPETITIVE) FOWARD CURRENT IFSM (A) Tj=25C
FORWARD CURRENT IF (A)
400
300
200
100
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60HZ)
MAXIMUM POWER DISSIPATION 100 P (W) 160 TC (C)
ALLOWABLE CASE TEMPERATURE VS. DC OUTPUT CURRENT RESISTIVE, INDUCTIVE LOAD
RESISTIVE, INDUCTIVE LOAD
80
140
POWER DISSIPATION
60
CASE TEMPERATURE 0 8 16 24 32 IO (A) 40
120
40
100
20
80
0
60
0
8
16
24
32 IO (A)
40
DC OUTPUT CURRENT
DC OUTPUT CURRENT
Feb.1999

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